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| STB50NF25 STP50NF25 N-channel 250V - 0.055 - 45A - D2PAK - TO-220 low gate charge STripFETTM Power MOSFET Features Type STP50NF25 STB50NF25 VDSS 250 V 250 V RDS(on) Max <0.069 <0.069 ID 45 A 45 A PW 160 W 160 W 3 1 1 2 3 100% avalanche tested Gate charge minimized Low intrinsic capacitances DPAK TO-220 Application Switching applications Description This Power MOSFET series realized with STMicroelectronics unique STripFETTM process has specifically been designed to minimize onresistance and gate charge. It is therefore suitable as primary side switch allowing high efficiencies. Figure 1. Internal schematic diagram Table 1. Device summary Marking 50NF25 50NF25 Package TO-220 DPAK Packaging Tube Tape & reel Order codes STP50NF25 STB50NF25 November 2007 Rev 4 1/14 www.st.com 14 Contents STB50NF25 - STP50NF25 Contents 1 2 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) ............................ 6 3 4 5 6 Test circuit ................................................ 8 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 2/14 STB50NF25 - STP50NF25 Electrical ratings 1 Electrical ratings Table 2. Symbol VDS VGS ID (1) Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Drain current (continuous) at TC = 25 C Drain current (continuous) at TC = 100 C Drain current (pulsed) Total dissipation at TC = 25 C Derating factor Value 250 20 45 28 180 160 1.28 10 -55 to 150 Unit V V A A A W W/C V/ns C ID (1) IDM (2) PTOT dv/dt (3) Tj Tstg Peak diode recovery voltage slope Operating junction temperature Storage temperature 1. Value limited by wire bonding 2. Pulse width limited by safe operating area 3. ISD 45 A, di/dt 200 A/s, VDD = 80% V(BR)DSS Table 3. Symbol Rthj-case Rthj-amb Tl Thermal data Parameter Thermal resistance junction-case max Thermal resistance junction-amb max Maximum lead temperature for soldering purpose Value 0.78 62.5 300 Unit C/W C/W C Table 4. Symbol IAR (1) Avalanche data Parameter Avalanche current, repetitive or not-repetitive Single pulse avalanche energy Value 32 160 Unit A mJ EAS (2) 1. Pulse width limited by Tjmax 2. Starting TJ= 25 C, ID = IAR, VDD = 50 V 3/14 Electrical characteristics STB50NF25 - STP50NF25 2 Electrical characteristics (TCASE=25C unless otherwise specified) Table 5. Symbol V(BR)DSS IDSS IGSS VGS(th) RDS(on) On/off states Parameter Drain-source breakdown voltage Zero gate voltage drain current (VGS = 0) Gate body leakage current (VDS = 0) Gate threshold voltage Static drain-source on resistance Test conditions ID = 1 mA, VGS= 0 VDS = Max rating, VDS = Max rating @125 C VGS = 20 V VDS= VGS, ID = 250 A VGS= 10 V, ID= 22 A 2 3 0.055 Min. 250 1 10 100 Typ. Max. Unit V A A nA V 4 0.069 Table 6. Symbol gfs (1) Ciss Coss Crss Qg Qgs Qgd RG Dynamic Parameter Forward transconductance Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Gate-source charge Gate-drain charge Test conditions VDS =10 V, ID = 22 A VDS =25 V, f=1 MHz, VGS=0 VDD=200 V, ID = 45 A VGS =10 V (see Figure 14) f=1 MHz Gate Bias, Bias=0 Test signal level=20 mV open drain Min. Typ. 20 2670 465 70.5 68.2 12.2 33.4 Max. Unit S pF pF pF nC nC nC Gate input resistance 1.1 1. Pulsed: pulse duration=300s, duty cycle 1.5% 4/14 STB50NF25 - STP50NF25 Electrical characteristics Table 7. Symbol td(on) tr td(off) tf Switching times Parameter Turn-on delay time Rise time Off-voltage rise time Fall time Test conditions VDD = 125 V, ID = 22 A, RG = 4.7 , VGS = 10 V (see Figure 13) VDD = 125 V, ID = 22 A, RG = 4.7 , VGS = 10 V (see Figure 13) Min Typ 45 26 63 20 Max Unit ns ns ns ns Table 8. Symbol ISD ISDM VSD trr Qrr IRRM trr Qrr IRRM Source drain diode Parameter Source-drain current Source-drain current (pulsed) Forward on voltage Reverse recovery time Reverse recovery charge Reverse recovery current Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 45 A, VGS = 0 ISD= 45 A, di/dt = 100 A/s, VDD = 60 V (see Figure 18) ISD = 45 A, di/dt = 100 A/s, VDD = 60 V, Tj = 150 C (see Figure 18) 198 1.5 15 256 2.2 17 Test conditions Min Typ Max 45 180 1.5 Unit A A V ns C A ns C A 5/14 Electrical characteristics STB50NF25 - STP50NF25 2.1 Figure 2. Electrical characteristics (curves) Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized BVDSS vs temperature Figure 7. Static drain-source on resistance 6/14 STB50NF25 - STP50NF25 Figure 8. Gate charge vs gate-source voltage Figure 9. Electrical characteristics Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Source-drain diode forward characteristics 7/14 Test circuit STB50NF25 - STP50NF25 3 Test circuit Figure 14. Gate charge test circuit Figure 13. Switching times test circuit for resistive load Figure 15. Test circuit for inductive load Figure 16. Unclamped Inductive load test switching and diode recovery times circuit Figure 17. Unclamped inductive waveform Figure 18. Switching time waveform 8/14 STB50NF25 - STP50NF25 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com 9/14 Package mechanical data STB50NF25 - STP50NF25 TO-220 mechanical data mm Dim Min A b b1 c D D1 E e e1 F H1 J1 L L1 L20 L30 P Q 4.40 0.61 1.14 0.49 15.25 1.27 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 3.85 2.95 0.147 0.104 10.40 2.70 5.15 1.32 6.60 2.72 14 3.93 0.393 0.094 0.194 0.048 0.244 0.094 0.511 0.137 Typ Max 4.60 0.88 1.70 0.70 15.75 Min 0.173 0.024 0.044 0.019 0.6 inch Typ Max 0.181 0.034 0.066 0.027 0.62 0.050 0.409 0.106 0.202 0.051 0.256 0.107 0.551 0.154 0.645 1.137 0.151 0.116 10/14 STB50NF25 - STP50NF25 Package mechanical data D2PAK MECHANICAL DATA TO-247 MECHANICAL DATA mm. DIM. MIN. A A1 A2 B B2 C C2 D D1 E E1 G L L2 L3 M R V2 0 4.88 15 1.27 1.4 2.4 0.4 4 10 8.5 5.28 15.85 1.4 1.75 3.2 0.192 0.590 0.050 0.055 0.094 0.015 4.4 2.49 0.03 0.7 1.14 0.45 1.23 8.95 8 10.4 0.393 0.334 0.208 0.625 0.055 0.068 0.126 TYP MAX. 4.6 2.69 0.23 0.93 1.7 0.6 1.36 9.35 MIN. 0.173 0.098 0.001 0.027 0.044 0.017 0.048 0.352 0.315 TYP. MAX. 0.181 0.106 0.009 0.036 0.067 0.023 0.053 0.368 inch 3 1 11/14 Packaging mechanical data STB50NF25 - STP50NF25 5 Packaging mechanical data D2PAK FOOTPRINT TAPE AND REEL SHIPMENT REEL MECHANICAL DATA DIM. A B C D G N T 1.5 12.8 20.2 24.4 100 30.4 26.4 13.2 mm MIN. MAX. 330 0.059 0.504 0.520 0795 0.960 1.039 3.937 1.197 BULK QTY 1000 inch MIN. MAX. 12.992 TAPE MECHANICAL DATA DIM. A0 B0 D D1 E F K0 P0 P1 P2 R T W mm MIN. 10.5 15.7 1.5 1.59 1.65 11.4 4.8 3.9 11.9 1.9 50 0.25 23.7 24.3 MAX. 10.7 15.9 1.6 1.61 1.85 11.6 5.0 4.1 12.1 2.1 inch MIN. MAX. 0.413 0.421 0.618 0.626 0.059 0.063 0.062 0.063 0.065 0.073 0.449 0.456 0.189 0.197 0.153 0.161 0.468 0.476 0.075 0.082 1.574 0.35 0.0098 0.0137 0.933 0.956 BASE QTY 1000 * on sales type 12/14 STB50NF25 - STP50NF25 Revision history 6 Revision history Table 9. Date 07-Mar-2007 10-Mar-2007 13-Apr-2007 14-Nov-2007 Document revision history Revision 1 2 3 4 First release Typo mistake on page 1 (marking) Corrected value on Table 6. Added new section: Electrical characteristics (curves) Changes 13/14 STB50NF25 - STP50NF25 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ("ST") reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST's terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST'S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. UNLESS EXPRESSLY APPROVED IN WRITING BY AN AUTHORIZED ST REPRESENTATIVE, ST PRODUCTS ARE NOT RECOMMENDED, AUTHORIZED OR WARRANTED FOR USE IN MILITARY, AIR CRAFT, SPACE, LIFE SAVING, OR LIFE SUSTAINING APPLICATIONS, NOR IN PRODUCTS OR SYSTEMS WHERE FAILURE OR MALFUNCTION MAY RESULT IN PERSONAL INJURY, DEATH, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE. ST PRODUCTS WHICH ARE NOT SPECIFIED AS "AUTOMOTIVE GRADE" MAY ONLY BE USED IN AUTOMOTIVE APPLICATIONS AT USER'S OWN RISK. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. (c) 2007 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America www.st.com 14/14 |
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